EXCITON BINDING ENERGY IN T-SHAPED SEMICONDUCTOR QUANTUM WIRES

Exciton binding energies in semiconductor T-shaped quantum wires formed at the intersection of two quantum wells are given as functions of well width and potential offset. The calculations are made within the effective mass approximation using a variational approach for the exciton binding energy and numerical calculations for the nonseparable single particle electron and hole subband wave functions. Recent experimental results for these structures are discussed.