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Lowered on-resistance in p-n junction diodes with highly Ge-doped GaN substrate
Lowered on-resistance in p-n junction diodes with highly Ge-doped GaN substrate
2021
Hiroshi Ohta
Naomi Asai
Kazuhiro Mochizuki
Takehiro Yoshida
Fumimasa Horikiri
Yoshinobu Narita
Tomoyoshi Mishima
Keywords:
p–n junction
on resistance
Diode
Optoelectronics
Doping
Substrate (chemistry)
Materials science
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