Measurement of Ge Electrical Parameters by Analysing its Optical Dynamics

By using a dynamical model giving both the IR reflectivity and transmittivity of a semiconductor after an intense photo-plasma production, it is possible to derive several electrical parameters, as Auger recombination, radiative recombination and impurity recombination. The model has been tested on previous experimental works and used to analyse the 10.6 ?m dynamical transmission reflection induced by a 1.06 ns excitation in Ge optical windows.