Threshold Switching in Anthracene Thin Films

Threshold switching was observed in anthracene thin films (<3 μm) using a circuit with a high protective resistance. On the other hand, when the protective resistance was small, the switching was erratic and irreproducible. In the latter case, the switching was occasionally accompanied by filamentary damages caused by the excess current focused at the electrically weak spots, and the threshold voltage was poorly dependent on the protective resistance. The threshold-switching characteristics for thin films are interpretable in terms of the transition from the trap-limited SCLC to the trap-filled SCLC. The thermal breakdown model is not adaptable.