Study of Dielectric and Electrical Properties of Nanostructured ZnO/MgO Films via Chemical Bath Deposition Techniques

This research work focuses on the synthesis and deposition of nanostructured ZnO/MgO using immersion method where the influence of deposition time had been investigated. The deposition time was varied by controlling the immersion time at 2, 4, 6 and 8 hrs respectively. Electrical properties obtained revealed that the resistivity values varied from 12.5 to 20.0 kΩ.cm which due to the changes in carrier mobility and scattering. It being found that, the leakage current behaviour shows good in dielectric properties where the J values obtained was below than 1E-8 A.cm-2. Some surface modification observed as the immersion time increased from 2 to 8 hrs which also reflects to the variation in resistivity, leakage current and k values obtained. The formation of flakes like structure was observed for films with 4 hrs immersion time which resulted in the enhancement in k values at high frequency region.