Interference resonance photocurrent in n-InSb

Abstract A new phenomenon - interference resonance photocurrent in semiconductors - is observed for the first time. The effect manifests itself in n -InSb in the domain of a weakly allowed impurity spin resonance (ISR). The magnitude of the resonance current exceeds the background value and direction of the current depends on the sign of radiation frequency shift from the resonance frequency and on the direction of light. A theoretical explanation of the effect is suggested.