Luminescence properties of Er, O-codoped GaAs/GaInP double heterostructures grown by organometallic vapor phase epitaxy

Abstract Er,O-codoped GaAs/GaInP double heterostructures (DHS : Er,O) were grown by organometallic vapor phase epitaxy and the intra-4f shell transitions of Er ions were investigated by photoluminescence (PL) measurements. Er,O-codoping was carried out with trisdipivaloylmethanatoerbium (Er(DPM) 3 ) as an Er source and an addition of O 2 diluted with Ar to a reactor. Er,O-codoped GaAs (GaAs : Er,O) and GaInP layers were all grown at 550°C. In-depth profiles showed a uniform distribution of Er and O along the growth direction in the GaAs : Er,O active layer. The Er concentration in the GaAs : Er,O active layer was evaluated to be about 5×10 17  cm −3 . In 4.2 K PL measurements, DHS : Er,O sample exhibited Er–2O lines and the intensity was approximately three times stronger than that of GaAs : Er,O sample. This suggests that photoexcited carriers confined in the GaAs : Er,O active layer contribute effectively to excitation of Er.