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Electrical characteristics of HfSiO x -gate AlGaN/GaN MOS-HEMT
Electrical characteristics of HfSiO x -gate AlGaN/GaN MOS-HEMT
2020
Ryota Ochi
Erika Maeda
Toshihide Nabatame
Koji Shiozaki
Tamotsu Hashizume
Keywords:
High-electron-mobility transistor
Optoelectronics
Materials science
algan gan
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