Fabrication of High Crystallinity of Nano-Silicon thin films and nc-Si TFT on Glass Substrate with Various Buffer Layer

The characteristics of nanocrystalline silicon (nc-Si) deposited on different film substrates were studied through field emission scanning electron microscope (FESEM), X-ray diffraction (XRD) and Raman scattering. Additionally, the thin film transistors (TFTs) of nanocrystalline silicon channel layers deposited upon various buffer layers were fabricated. We study the correlation between the nc-Si structure and TFT electrical characteristics. The performances of TFT of nc-Si channel layers on nc-Si buffer layer with the field effect mobility of 2.98 cm Vs and the 2x10 for on/off current ratio.