Highly conductive interface between a rubrene single crystal and a molybdenum oxide layer and its application in transistors

Abstract The formation of interfacial hole carriers between a rubrene single crystal and a 2 nm-thick molybdenum oxide layer resulted in the formation of a highly conductive interface with a high electrical conductivity of 0.16 S/cm and a very small activation energy of 0.03 eV. This highly conductive interface enabled charge injection and accumulation of a high drain current in the recombination zone in ambipolar transistors, resulting in a significant reduction of the driving voltage with high, balanced hole and electron mobilities of 1.1 and 0.5 cm 2 /V s, respectively.