30 GHz heterogeneously integrated capacitive InP-on-Si Mach–Zehnder modulators

We demonstrate high-bandwidth O-band Mach–Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 V⋅cm and a 3 dB bandwidth of up to 30 GHz was observed for a phase modulator length of 250 μm at a 0 V bias. Open eye patterns were observed at up to 25 Gb/s.