Charge Multiplication Properties in Highly Irradiated Epitaxial Silicon Detectors

Joˇzef Stefan Institute, Ljubljana, SloveniaE-mail: joern.lange@desy.deCharge multiplication (CM) occuring in highly radiation-damaged Si sensors is currently underdiscussion as an option to overcome the strong trapping of charge carriers in the innermost pixellayers of future Super-LHC detectors. In this work, CM was studied in p