Photoluminescence Study of Interdot Carrier Transfer on Strain‐relaxed InAs Quantum Dots

Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non‐relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120–200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non‐relaxed QDs.