Study of defect morphology in the metal and dielectric layers of MIS structure by SIMS and SEM

The results of complex studies of Si-based MIS layer structures using SIMS with the secondary ion energy distribution analysis and SEM have been analysed. By these methods morphology-type defects in metal layers, the MI interface and the adjacent dielectric layer can be revealed. These structural-impurity complexes at the interfaces MI and IS caused by the impurity and phase-inclusions may stimulate phase-structural transformations in MIS systems subjected to heat treatment. The effect of the conditions under which real MIS structures were fabricated (temperature, method of metallization, orientation of SI substrate, conditions during oxidation) has been studied. The physical and chemical processes in MIS layers affecting the development of morphology-type defects in MIS structures are discussed.