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Acemap > Paper > A 25 period InAs 0.54 P 0.46 /In 0.89 Ga 0.11 P MQW for 1.55 μm modulation grown by solid source MBE

A 25 period InAs 0.54 P 0.46 /In 0.89 Ga 0.11 P MQW for 1.55 μm modulation grown by solid source MBE

1998 
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