Effect of Carbon Doping Level on Static and Dynamic Properties of AlGaN/GaN Heterostructures Grown on Silicon

The impact of the extrinsic carbon doping level was investigated with the aim of finding the optimal level for GaN-on-Si HFETs. A tradeoff between the crystal quality degradation by carbon doping and dynamic properties of HFET structures was observed indicating the role of vertical dislocations in the dynamic performance of the carbon-doped GaN buffer.