CdS semiconductor doped silica xerogels

Abstract CdS doped amorphous silica was prepared by the sol-gel method. The CdS concentration in weight varied from 5% to 20%. The samples were characterized by four different and complementary techniques: X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), low frequency inelastic Raman scattering (LOFIRS) and small angle X-ray scattering (SAXS). These observations show that the size of the nanocrystals does not depend on the CdS concentration.