Semiconductor solid battery

This semiconductor solid battery is characterized in that a first insulating layer is provided between an N-type semiconductor and a P-type semiconductor. Preferably, the first insulating layer has a film thickness of not less than 3 nm and not more than 30 μm, and a specific permittivity of not more than 10. Preferably, the first insulating layer has a film density that is not less than 60% of a bulk body. Preferably, the semiconductor layer introduces a captured electric potential. The semiconductor solid battery eliminates leakage of electrolytic solution.