The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

Hai-li Wang,Peng Yang,Kun Xu,Xiang Yang Duan,Shu-Xiang Sun

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019

Hai-li Wang
Peng Yang
Kun Xu
Xiang Yang Duan
Shu-Xiang Sun

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. ...

Keywords:

High-electron-mobility transistor
Condensed matter physics
Optoelectronics
Physics
Computer simulation
algan gan
Mole fraction
barrier effect
high electron
Transistor

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