Reaserch of Low Temperature Alloyed Ohmic Contact on InP-Based PHEMT

2005 
The low-temperature alloyed ohmic contact of source and drain of InP-based PHEMT is researched. Different from the traditional process, through alloying at low temperature and the method of reversed metal surface and fast anneal, a specific contact resistance of 1.26×10-3Ω·cm2 with good surface morphology is achieved. The interaction and decomposition of compound semiconductor and the degradation of 2DEG due to the change of energy band is avoided. The descend of mobility ratio of 2DEG due to the dopant of Schottky layer diffusing into channel witch is caused of high temperature were greatly improved.
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