Capacitance-voltage profiling of quantum well structures

Capacitance‐voltage (C‐V) analysis of high quality MBE grown quantum well samples shows that carrier distributions are averaged over the scale of the Debye length. This averaging process results in strongly temperature dependent C‐V‐deduced doping distributions that can be very different from the actual ones. The doping distribution of the structure is obtained by fitting numerically simulated curves to the measured C‐V curves and doping profiles, respectively. Although the calculations do not take quantum size effects into account they show good agreement with the measured data.