Elucidating the origins of the two-dimensional electron gas in LaVO 3 / SrTiO 3 interfaces
2019
The influence of growth rate and substrate temperature on the two-dimensional electron gas (2DEG) of LaVO 3 / SrTiO 3 interfaces has been investigated. It is found that both growth rate and substrate temperature can modulate the structural and electrical properties of the LaVO 3 / SrTiO 3 interfaces through oxygen substrate-to-film transfer. When the LaVO 3 thin films are deposited at a low substrate temperature and a high growth rate, the LaVO 3 / SrTiO 3 interfaces exhibit weak oxygen substrate-to-film transfer and resultant low density of oxygen vacancies in the SrTiO 3 substrate. As a result, the intrinsic effect (polar discontinuity and/or dielectric screening) dominates the interfacial conduction, while the oxygen vacancies play a minor role. In contrast, the oxygen substrate-to-film transfer (oxygen vacancies in the SrTiO 3 substrate) can be enhanced (increased) by depositing the LaVO 3 thin films at lower growth rates and/or higher substrate temperatures. In this case, the contribution of oxygen v...
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