Modelling and analysis of current sensors for N-channel, vertical IGBTs

The static and dynamic performance of integrated current sensors in 500V, n-channel, asymmetric, vertical IGBTs are modelled and experimentally characterized. Two different current sensor structures are studied and compared. The active IGBT pilot shows more linear tracking of the main current with small pilot load resistor but the passive pilot is less susceptible to debiasing effect for a large resistor. During turn-on, the active pilot leads the main current due to RC delay whereas the passive pilot lags due to minority carrier diffusion. >