LED chip with DBR (distributed Bragg reflector) type current blocking layer and production method of LED chip

The invention provides an LED chip with a DBR (distributed Bragg reflector) type current blocking layer and a production method of the LED chip. The production method includes the steps: firstly, providing a sapphire substrate, forming a luminous epitaxial layer on the upper surface of the sapphire substrate, etching a groove with a waved side wall and a flat bottom surface in a P-pad region of the luminous epitaxial layer, forming a dielectric DBR on the surface of the groove to serve as the current blocking layer, and enabling the current blocking layer to form a concave structure with a waved side wall and a flat bottom surface; secondly, forming a transparent conducting layer on the luminous epitaxial layer and the concave structure, and etching the transparent conducting layer to enable the concave structure and an N region to be exposed outside; and finally, producing a P-pad on the concave structure, and producing an N-pad on the N region so that the LED chip is produced. The problems that a current blocking layer and a highly reflective electrode are low in adhesion and easy to fall off, and an LED chip is light-absorbing of a P electrode, low in current utilization rate ant the like in the prior art can be solved.