Effect of p-doping of the active region on the temperature stability of InAs/GaAs QD lasers

A detailed study of the effect of p-doping of the active region on characteristics of long-wavelength InAs/GaAs QD lasers is performed. As the doping level increases, the characteristic temperature rises and the range of temperature stability for the threshold current density is broadened. In a laser doped with 2 × 1012 cm−2 acceptors per QD sheet, the characteristic temperature of 1200 K is obtained in the temperature range 15–75°C and the differential quantum efficiency is stable in the range 15–65°C. A maximum CW output power of 4.4 W is reached in an optimized structure.