Manganese-doped copper nitride thin film-based visible light detector

The invention relates to the technical field of photoelectric detection, and provides a manganese-doped copper nitride thin film-based visible light detector. The visible light detector comprises a substrate 1, a bottom electrode 2, a visible light absorption layer 3 and a top electrode 4, wherein the visible light detector is of a simplest sandwich structure; and the visible light absorption layer 3 is a manganese-doped copper nitride thin film and is located between the bottom electrode 2 and the top electrode 4. A manufacturing method of the visible light detector comprises the steps of firstly, etching transparent conductive glass to form a transparent conductive narrow strip which is 0.8cm in width; depositing the manganese-doped copper nitride thin film by employing a magnetron sputtering technology; and finally depositing the metal top electrode 4 by employing a magnetron sputtering or evaporation deposition method to obtain the manganese-doped copper nitride thin film-based visible light detector. The visible light detector has good light responsivity, lasting repeatable jump performance and short response time, and is simple in structure, low in manufacturing cost, abundant and available in raw materials and simple in manufacturing method; and massive production can be achieved by employing magnetron sputtering and evaporation deposition technologies.