Growth Study of a-Si:H Thin Films by Hot Wire Cell PECVD Method

The Hot Wire Cell PECVD method has been newly developed to grow hydrogenated amorphous silicon (a-Si:H) thin films. The optical and electronic properties of the a-Si:H thin films have been investigated. The deposition rate was improved by increasing the rf power. The optical band gap varied from 1.78 eV to 1.66 eV with increasing the rf power from 20 to 60 watts. The FTIR spectra showed lower hydrogen content. The hydrogen content has been successfully reduced without decreasing the films conductivity. The optical band gap varied from 1.69 eV to 1.7 eV with increasing the substrate temperature from 175 o C to 275 o C. The dark conductivity of the