Millimeter-wave pulsed IMPATT diode oscillators
1976
Double-drift silicon IMPATT diodes were fabricated for pulse source application at 35, 94, and 140 GHz. The diodes were operated with 300 ns pulsewidth and a 1.5 percent duty cycle. All sources exhibited a change in output frequency of >1 percent throughout the duration of the pulsewidth with <1 dB peak power variation. Peak pulse output power levels of 10, 2, and 0.7 W were achieved in each of the three frequency bands, respectively.
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