Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

1997 
Abstract We report on the successful fabrication and electrical transport properties of single quantum wires fabricated by using InAs/AlGaSb heterostructures. Magnetotransport and high electric field characteristics have been measured on the various size of quantum wires. From comparison with the channel length-dependence of I–V characteristics of the different size quantum wires, we try to develop a comprehensive understanding on the quasi-one dimensional electron transport in InAs from the nearly ballistic regime to the hot electron condition. The fabrication and characteristics of superconducting weak link InAs/Pb:In devices are also reported. The modulation of differential conductivity has been observed by the gate bias voltage between the superconducting Pb–In contacts.
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