Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography

We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2 V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (103) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer.