10kV SiC MPS diodes for high temperature applications

This paper presents the device structure and characterization results of 10-kV 4H-SiC MPS diodes from room temperature to 200°C and compares them with JBS and PiN diodes fabricated on the same wafer. The results showed that SiC MPS diodes exhibit superior trade-off between forward voltage drop and low reverse recovery charge with increasing temperature. Results of numerical simulation are shown to explain the behavior of MPS diodes.