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Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias
2006
Machida Nobuya
Igarashi Mitsuhiko
Yamada Tomohiro
Miyamoto Yasuyuki
Furuya Kazuhito
Keywords:
Transistor
Terahertz radiation
Ballistic conduction
Electron
Electronic engineering
Materials science
hot electron transistors
gate control
Optoelectronics
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