Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection
2007
We have studied the current voltage and X-ray detection using front and back side processed,
unintentionally doped bulk GaAs Schottky detectors. GaAs detectors with large enough thickness
and low enough doping could be used for X-ray imaging, especially for medical applications.
GaAs Schottky detectors were fabricated using front and back side photolithographic processing
with Ti/Au for Schottky and Ge/Au/Ni/Au for Ohmic contacts. A number of detectors of size
2 mm 2 were tested. The breakdown voltage reached 600- 800 V in semi insulated (SI) GaAs
Schottky front and back side processed detectors. For these detectors the dark current was found
to be between 2- 90 nA. These detectors were also characterized with 150 keV, 3mA X-ray
radiation and they responded well by showing more than a hundred fold increase in photocurrent
due to production of electron hole pairs by the ionization processes. The processing of the
detectors and the I-V and X-ray characterization is presented in this report.
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