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Effect of different layer structures on the RF performance of GaN HEMT devices
Effect of different layer structures on the RF performance of GaN HEMT devices
2021
Jagori Raychaudhuri
Jayjit Mukherjee
Sudhir Kumar
Rajesh Bag
Meena Mishra
Santanu Ghosh
Keywords:
High-electron-mobility transistor
Materials science
Optoelectronics
layer
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