Old Web
English
Sign In
Acemap
>
Paper
>
450 V 30 A bipolar power transistor with two levels of metallisation
450 V 30 A bipolar power transistor with two levels of metallisation
2002
P. Hazard
D Sebille
A. Senes
Keywords:
Power semiconductor device
Engineering
Electronic engineering
Heterostructure-emitter bipolar transistor
Electrical engineering
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]