Tungstate low-temperature sintered microwave dielectric ceramic material and preparation method thereof

The invention discloses a tungstate low-temperature sintered microwave dielectric ceramic material and a preparation method thereof. The molecular structure expression of the material is that: [Zn1-x(Li0.5Sm0.5)x]WO4, wherein x is more than or equal to 0.05 and less than or equal to 0.8. The preparation method comprises the following steps of: mixing prepared chemical raw materials, adding alcohol into the mixture, mixing the mixture for 4 hours by a wet milling process, drying, sieving and pressing the mixture to form blocky materials, putting the blocky materials into an alumina crucible, raising the temperature to between 700 and 800 DEG C at a speed of 5 DEG C/min, and preserving the heat for 4 to 8 hours to obtain clinkers; crushing the clinkers, performing secondary ball milling and drying and pelletizing to obtain porcelain; and sintering the porcelain at the temperature of between 800 and 850 DEG C for 2 to 4 hours. The microwave dielectric ceramic material has the advantages of simple chemical composition and preparation process and low inherent sintering temperature (between 800 and 850 DEG C). By the preparation method, the prepared ceramic material has a dielectric constant of 14 to 17, high Q*f and low temperature frequency coefficient. The material and the preparation method can be used for manufacturing microwave devices, such as low temperature co-fired ceramics (LTCC), multilayer dielectric resonators, microwave antennae, filters and the like.