Growth of ZnO films by MOCVD in high magnetic field

Abstract Metalorganic chemical vapor deposition of zinc oxide films on sapphire basal plane surface was performed in a high magnetic field of 10 T with diethyl zinc and water vapor as starting materials. Reducing in growth rate, particle size and suppression of formation of leaflet-like structure were observed as the effects of applying magnetic field parallel to gas stream. These effects can be understood by assuming a model where the mobility of the adsorbed atoms on the growing crystals is reduced by the Lorentz force in high magnetic field.