Ion scattering analysis programs for studying surface and interface structures

We have synthesized ion scattering analysis programs for studying surface and interface structures. The probing ion energies can be selected in a wide energy range from 10 keV up to several MeV. One of the present programs allows the simulation of both random and aligned spectra from perfect or partially disordered heteroepitaxial films. For defect profiling, the following types are available: (1) asymmetric Gaussian, (2) exponential reduction shape, and (3) step function. Another is used to analyze the structures of islands formed on the top surfaces of substrates. The targets have basically multielemental and multilayered structures comprising the units of amorphous/single crystal. These simulation programs are applied to disorder profiling of Ar+‐implanted LiNbO3, mechanically polished Mn‐Zn ferrite, and GaAs/Si heteroepitaxial films, and to characterizing the Cu‐Si islands on Si substrates.