Encapsulation strategies on 2D materials for field effect transistors and photodetectors

ABSTRACT Two-dimensional (2D) layered materials provide a promising alternative solution for overcoming the scaling limits in conventional Si-based devices. However, practical applications of 2D materials are facing crucial bottlenecks, particularly that arising from the instability under ambient condition. The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions, both experimentally and theoretically. This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials. The encapsulation strategies of mechanical transfer, polymer capping, atomic layer deposition, in-situ oxidation, and surface functionalization are systematically discussed for improving the ambient stability of 2D materials. In addition, the current advances in air-stable and high-performance 2D materials-based field effect transistors (FETs) and photodetectors assisted by the encapsulation strategies are outlined. Furthermore, the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested.