Atomic Layer Epitaxy of GaAs on Ge Substrates

We report on the low temperature growth of GaAs on Ge substrates using Atomic Layer Epitaxy. Low temperature deposition has resulted in substantial reduction of the outdiffusion of Ge into the GaAs epilayer as being indicated from SIMS. The I-V characteristics of the GaAs/Ge heterojunction were thyristor like or near abrupt depending on the growth temperature. We also report on the use of the Atomic Layer Epitaxy self-limiting adsorption process of TMGa to control the diffusion of Ga into Ge substrates at the monolayer level.