Porous Structure Formation on Silicon Surface Treated by Plasma Focus Device

Pores formation has been observed on silicon surface, induced by plasma focus treatment. The scanning electron microscope observation shows the presence of different pores sizes which scale from micro to nano dimensions. A spacial dependency of pores distribution according to pore sizes is revealed. This distribution is reproducible. The relative nano/micro pores formation is dependent of the experimental conditions (distance from anode and number of shots). The dynamic of pores formation and reason of pores distribution is discussed suggesting the implication of liquid-phase process. The ablated copper from the anode is deposited in noticeable amount on the silicon surface. The lateral distribution and diffusion of copper are investigated using Rutherford Backscattering spectroscopy technique.