MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/ and Zr silicate gate dielectrics

In this paper, we report MOS characteristics of ultra thin, high quality CVD ZrO/sub 2/ and Zr silicate (Zr/sub 27/Si/sub 10/O/sub 63/) gate dielectrics deposited on Si substrates by in-situ rapid thermal processing. These high-K gate dielectrics show excellent equivalent oxide thickness (EOT) of 8.9 /spl Aring/ (ZrO/sub 2/) and 9.6 /spl Aring/ (Zr/sub 27/Si/sub 10/O/sub 63/) with extremely low leakage current of 20 mA/cm/sup 2/ and 23 mA/cm/sup 2/ @Vg=-1 V, respectively. The thermal stability of ZrO/sub 2//Si as well as the poly-Si/ZrO/sub 2/ interfaces are examined using in-situ XPS. We also investigate the conduction mechanisms and long-term reliability in these gate stacks. In addition, the effects of various gate electrode materials (Al/TiN, poly-SiGe, and poly-Si) on the electrical properties of gate stacks are studied. Finally, we also study the boron diffusion behaviors in p/sup +/-poly-Si PMOS.