Study of Green Organic Light-Emitting Diodes Based on TPBTSi Chelate

Using a novel chelate 2,2,3,3-tetraphenyl-4,4-bisthienylsilole (TPBTSi) as emissive material and Alq3 as eletron transporting material, a triple layer organic light-emitting device was fabricated using convetional vaccum deposition method. The device structure is: ITO/N,N’-Diphenyl-N, N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’- diamine (NPB) /TPBTSi/tri-(8-hydroxyquinoline)-aluminum (Alq3)/Mg:Ag. The peak of electroluminescence (EL) spectrum locates at 516 nm, which is the spectrum of TPBTSi. The commissions internationale l’eclairage (CIE) coordinates are (0.275,0.448 8), which are independent on the variation of bias voltage. Under the bias voltage of 15 V, the maximum luminance and luminance efficiency are 7 032 cd/m2 and 0.79 lm/W, respectively.