Large signal characterization and modeling of heterojunction bipolar transistors

Abstract : The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation , and cutoff regions, with temperature effects included. This model has been implemented in a commercial harmonic balance simulator LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits.