Surface Morphology of Seeded Nanostructured ZnO on Silicon by Sol-Gel Technique

Nanostructured ZnO as a seeded was prepared by sol-gel technique on p-type silicon in various low molarities. Zinc acetate, Diethanolamine (DEA), and isopropyl were use as starting material, stabilizer, and solvent respectively. Atomic Force Microscopy (AFM) analysis shows smooth surface and uniform layer were produced in low molarities of precursor. The surface morphology of nanostructured ZnO was analyzed by Field Emission Scanning Electron Microscopic (FESEM). It is found that the nanostructured ZnO were successfully deposited on the silicon substrate with size ~10 nm to ~35 nm. Photoluminescence spectroscopy was employed to study the band gap in room temperature. It shows that very low intensity of PL in 0.05m and 0.1 m. PL intensity become more obvious starting from 0.15 m of precursor concentration.