New combination of damage control techniques using SEN's single-wafer implanters
2011
Demands for low leakage in high performance devices of SoC and DRAM devices are constantly increasing. As a result, EOR (End of Range) defects have become a focus of process engineering because residual defects after anneal can be a main cause of junction leakage.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
4
References
2
Citations
NaN
KQI