A Calibrated Model for Trapping of Implanted Dopants at Material Interface During

An enhanced version of Lau's model for trapping of dopants at material interfaces has been implemented in the process simulator TSUPREM-4. The model includes interactions among dopant species and diffusion along material interfaces. It has been calibrated for phosphorus, boron, and arsenic and shows good agreement with SIMS data and with NMOS and PMOS device characteristics.