Effects of Atomic Hydrogen on the Indium Incorporation in InGaN Grown by RF-Molecular Beam Epitaxy

We investigated the effect of atomic hydrogen(H) irradiation on the In incorporation in InGaN films grown by RF-molecular beam epitaxy (MBE). The molecular hydrogen (H2) and atomic H irradiation in InGaN growth by RF-MBE were found to enhance the In incorporation. The atomic H irradiation in InGaN growth increased the In incorporation with increasing H2 flow rate. The In incorporation for samples grown with H was higher than without H2 in the temperature range of 640°C to 700°C. These results may represent a new and interesting avenue of investigation into the understanding of growth of III-nitride films. We consider that the mechanisms responsible for the modification of In incorporation by atomic H irradiation are mainly due to an increase of the nitrogen species and partly to suppression of 3-dimensional(3-D) growth thereby enhancing a 2-D growth.