Ion-beam lithography: A promising technique for the patterning of graphene oxide foil

Selective deoxygenation of graphene oxide has been conducted with regard with the design and fabrication of graphene based devices. The ion beam lithography is considered to be a powerful method for patterning onto graphene oxide foil. A helium beam has been used for both direct patterning onto graphene oxide foil and simultaneous online characterisation of its structural and compositional changes. Scanning electron microscopy, energy dispersive spectroscopy and Rutherford backscattering spectrometry analyses have been accurately employed to reveal and monitor the deoxygenation of the graphene oxide foil demonstrating the reliability of the direct patterning using the ion beam lithography technique.