SIMULATION DES EFFETS DES IONS 4He, 12C et 63Cu SUR UNE DIODE SILICIUM.

The effect of 5 MeV a particule, 30 MeV I2C ion and 70 MeV 63Cu ion on large area (3 104 pm2). silicon P+N diode is simulated. Computer simulation is performed in 3D axi-symmetric geometry with the device simulator ACCES. The effect of high LET (Linear Energy Transfert) particule with short track is compared to the effect of low LET particule with long track. Diffusion component of the collected charge is shown to be important for the three particles in this large area 10 V reverse-biased diode.